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| OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES * * * * Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PER TRANSISTOR @ 25C PART NUMBER OMD100 OMD200 OMD400 OMD500 VDS 100V 200V 400V 500V RDS(on) .08 .11 .35 .43 ID 25A 25A 13A 11A 3.1 SCHEMATIC CONNECTION DIAGRAM FET 4 G S D FET 3 GS D 1.520 .150 .500 MIN. .260 1.000 SQ. 45 REF .170 R. TYP. .156 DIA. TYP. .040 LEAD DIA. D S G G S D .187 TYP. .125 (10 PLCS) .625 .050 .270 FET 1 FET 3 4 11 R2 Supersedes 1 07 R1 3.1 - 1 3.1 OMD100 - OMD500 ELECTRICAL CHARACTERISTICS: STATIC P/N OMD100 (100V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2 (TC = 25C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STATIC P/N OMD200 (200V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0.1 0.2 (TC = 25C unless otherwise noted) Min. Typ. Max. Units Test Conditions 100 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 1.60 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = -20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C Min. Typ. Max. Units Test Conditions 200 2.0 4.0 100 -100 0.25 1.0 V V nA nA mA mA A 1.36 1.76 .085 .110 0.14 .200 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = + 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C .065 .080 .10 .160 gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 9.0 10 2700 1300 470 28 45 100 50 S(W ) VDS 2 VDS(on), ID = 20 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V (MOSFET switching times are essentially independent of operating temperature.) gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10.0 12.5 2400 600 250 25 60 85 38 S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 40 - 160 - 2.5 A A V ns Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 - 30 - 120 -2 TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms VSD trr ns 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) A A V (W ) 3.1 - 2 DYNAMIC DYNAMIC Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms ELECTRICAL CHARACTERISTICS: STATIC P/N OMD400 (400V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 2.0 0.30 .60 0.1 0.2 (TC = 25C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STATIC P/N OMD500 (500V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 13 2.1 0.1 0.2 (TC = 25C unless otherwise noted) Min. Typ. Max. Units Test Conditions 400 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 2.8 .35 .70 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A, TC = 125 C Min. Typ. Max. Units Test Conditions 500 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 3.0 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, TC = 125 C 0.35 0.43 0.66 0.88 gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6.0 9.6 2900 450 150 30 40 80 30 S(W ) VDS 2 VDS(on), ID = 8.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID @ 8.0 A Rg =5.0 W , VGS =10V (MOSFET switching times are essentially independent of operating temperature.) gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6.0 7.2 2600 280 40 30 46 75 31 S(W ) VDS 2 VDS(on), ID = 7.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5.0 W , VGS = 10 V (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 600 - 15 - 60 - 1.6 A A V ns Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 - 13 - 52 - 1.4 TC = 25 C, IS = -15 A, VGS = 0 TJ = 100 C, IF = IS, dlF/ds = 100 A/ms VSD trr ns 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) A A V (W ) 3.1 - 3 DYNAMIC DYNAMIC Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S OMD100 - OMD500 TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms 3.1 OMD100 - OMD500 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter VDS VDGR ID @ TC = 25C ID @ TC = 100C IDM VGS PD @ TC = 25C PD @ TC = 100C Junction To Case Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor 2 2 OMD100 100 100 25 16 100 20 125 50 1.0 .033 OMD200 200 200 25 16 80 20 125 50 1.0 .033 OMD400 400 400 13 .8 54 20 125 50 1.0 .033 OMD500 500 500 11 7 40 20 125 50 1.0 .033 Units V V A A A V W W W/C W/C Junction To Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 -55 to 150 -55 to 150 300 300 300 C C 1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%. 2 Package pin limitation = 10 Amps THERMAL RESISTANCE RthJC RthJA Junction-to-Case Junction-to-Ambient 1.0 30 C/W C/W Free Air Operation POWER DERATING 3.1 PACKAGE OPTIONS MOD PAK 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 |
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